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this is information on a product in full production. march 2014 docid025439 rev 2 1/16 STL10N60M2 n-channel 600 v, 0.580 typ., 5.5 a mdmesh ii plus? low qg power mosfet in a powerflat? 5x6 hv package datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using a new generation of mdmesh? technology: mdmesh ii plus? low qg. this revolutionary power mosfet associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. am15540v3 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) 1 2 3 4 powerflat? 5x6 hv order code v ds @ t jmax r ds(on) max i d STL10N60M2 650 v 0.660 ? 5.5 a table 1. device summary order code marking package packaging STL10N60M2 10n60m2 powerflat? 5x6 hv tape and reel www.st.com
contents STL10N60M2 2/16 docid025439 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid025439 rev 2 3/16 STL10N60M2 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d (1) 1. the value is limited by package drain current (continuous) at t c = 25 c 5.5 a i d (1) drain current (continuous) at t c = 100 c 3.5 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 22 a p tot (2) total dissipation at t c = 25 c 48 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 110 mj dv/dt (3) 3. i sd 5.5 a, di/dt 400 a/s, v dspeak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2.6 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 59 c/w
electrical characteristics STL10N60M2 4/16 docid025439 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.5 a 0.580 0.660 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 400 - pf c oss output capacitance - 22 - pf c rss reverse transfer capacitance -0.84-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0 to 480 v, v gs = 0 - 83 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.4 - ? q g total gate charge v dd = 480 v, i d = 7.5 a, v gs = 10 v (see figure 15 ) -13.5-nc q gs gate-source charge - 2.1 - nc q gd gate-drain charge - 7.2 - nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 300 v, i d = 3.75 a, r g = 4.7 , v gs = 10 v (see figure 19 ) -8.8-ns t r rise time - 8 - ns t d(off) turn-on delay time - 32.5 - ns t f fall time - 13.2 - ns
docid025439 rev 2 5/16 STL10N60M2 electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 22 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 7.5 a, di/dt = 100 a/s v dd = 60 v (see figure 16 ) - 270 ns q rr reverse recovery charge - 2 c i rrm reverse recovery current - 14.4 a t rr reverse recovery time v dd = 60 v di/dt = 100 a/s, i sd = 7.5 a t j =150 c (see figure 16 ) - 376 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 15 a
electrical characteristics STL10N60M2 6/16 docid025439 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse am16157v1 single pulse 0.05 0.02 0.01 d =0.5 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 10 -2 10 -1 10 -6 10 -3 10 -2 -1 10 zthpowerflat_5x6_19 i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 4v 5v 6v v gs =7, 8, 9, 10v 20 10 12 14 am15823v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =18v 14 10 2 6 10 am15824v1 v gs 6 4 2 0 0 q g (nc) (v) 2 8 10 v dd =480v 300 200 100 0 400 v ds 4 500 v ds (v) i d =7.5a 6 8 10 12 12 am15825v1 r ds(on) 0.570 0.560 0.550 0 2 i d (a) ( ) 1 3 0.580 v gs =10v 4 5 0.590 0.600 0.610 am16158v1
docid025439 rev 2 7/16 STL10N60M2 electrical characteristics 16 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature figure 13. source-drain diode forward characteristics c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 am15827v1 eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 300 400 600 am15832v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am15915v1 r ds(on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 2.5 a 1.3 1.5 1.7 1.9 2.1 2.3 v gs = 10 v am15916v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 i d =1ma 1.09 1.11 am15917v1 v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 6 7 1 1.2 1.4 am15830v1
test circuits STL10N60M2 8/16 docid025439 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025439 rev 2 9/16 STL10N60M2 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL10N60M2 10/16 docid025439 rev 2 figure 20. powerflat? 5x6 hv drawing 8368143_rev_b
docid025439 rev 2 11/16 STL10N60M2 package mechanical data 16 table 8. powerflat? 5x6 hv mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.005.205.40 e5.956.156.35 d2 4.30 4.40 4.50 e2 3.10 3.20 3.30 e1.27 l0.500.550.60 k1.902.002.10
package mechanical data STL10N60M2 12/16 docid025439 rev 2 figure 21. powerflat? 5x6 hv recommended footprint (dimensions are in mm) 8368143_rev_b_footprint
docid025439 rev 2 13/16 STL10N60M2 packaging mechanical data 16 5 packaging mechanical data figure 22. powerflat? 5x6 tape (a) figure 23. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
packaging mechanical data STL10N60M2 14/16 docid025439 rev 2 figure 24. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
docid025439 rev 2 15/16 STL10N60M2 revision history 16 6 revision history table 9. document revision history date revision changes 28-oct-2013 1 first release. 26-mar-2014 2 document status promoted from preliminary to production data. minor text changes.
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